Ionotronic devices rely on charge effects based on ions, instead of electrons or in addition to electrons. These devices open new opportunities for creating electrically switchable memories. Researchers at Aalto University in Finland have visualized how oxygen ion migration in a complex oxide material causes the material to alter its crystal structure in a uniform and reversible fashion, prompting large modulations of electrical resistance. Resistance-switching random access memories could utilize this effect.

This post comes from the RSS feed of EurekaAlert, you can find more here!

Written by admin